中文摘要：

首先利用TCAD半导体器件仿真软件全面系统地分析了不同发射区表面浓度和结深对P型单晶硅太阳电池短路电流、开路电压、填充因子及转换效率的影响。然后以获得最优的发射区结构参数为目标，对热扩散工艺和离子注入工艺进行了仿真研究。仿真结果表明，发射区表面浓度和结深的变化对单晶硅太阳电池输出特性产生显著影响。当发射区表面浓度为5×10^20cm^-3，结深为0．1μm时，太阳电池转换效率最高，可达20．39％。若采用热扩散工艺制备发射区，扩散温度范围为825～850℃，扩散时间范围为10～20min；若采用离子注入工艺制备发射区，当注入剂量为1×10^17cm^-2，注入能量为5keV时，退火温度范围为850～875℃，退火时间范围为5～15min。

英文摘要：

First, the influences of emitter surface concentration and junction depth on P-type monocrystalline silicon solar cell＇s short-circuit current, open-circuit voltage, fill factor and conversion efficiency were studied compre-hensively and systematically by using TCAD semiconductor device simulation software. And then to obtain the optimal emitter structure parameters, the study on the thermal diffusion process and ion implantation process was conducted by simulation. The results showed that emitter with different surface concentration and junction depth has noticeable effect on output characteristics of solar cells. When the emitter surface concentration was 5×10^20cm^-3 , and the iunction depth is 0.1 μm, the monocrystalline silicon solar cell conversion efficiency can be as high as 20. 39%. If the thermal diffusion process was used for the preparation of the emitter, the scope of the diffusion temperature is 825-850 ℃ ,the scope of the diffusion time is 10-20 min; If using ion implantation process to prepare emitter, when dose is 1×10^17cm^-2 , injection energy is 5 keV , the scope of the annealing temperature is 850-875 ℃, the scope of the annealing time is 5-15 min.