中文摘要：

采用有限差分法等方法研究了晶硅材料体内不同类型缺陷对晶硅电池暗I-V特性的影响。研究表明：晶硅电池暗I-V特性的自然对数曲线可分为三个基本区域;随受主型、施主型和复合中心型缺陷密度的增加,电池的开路电压、短路电流、填充因子和效率等参数均发生退化;在反向偏压下,受主型缺陷的密度增加,不会引起不同偏压下晶硅电池暗电流的明显变化,但施主型和复合中心型缺陷密度大于某阈值时,会引起各偏压下晶硅电池暗电流出现明显变化;在正向偏压下,受主型缺陷可很好地保持晶硅电池暗I-V特性曲线基本性质,但施主型和复合中心型缺陷密度大于某阈值时,会导致晶硅电池暗I-V特性曲线的性质发生明显变化。

英文摘要：

The influences of different types of defects inside crystalline silicon （c-Si） material on the dark I-V characteristics of c-Si solar cells （c-Si SCs） by solving semiconductor device equations using finite difference method. The results show that the natural logarithm curves of the dark I-V characteristic of c-Si SCs can be divided into three fundamental regions. The output parameters ofc-Si SCs, such as open circuit voltage, short circuit current, filling factor and efficiency, are degraded under the reverse bias voltage conditions, the dark current values of c-Si SCs under different bias voltages are unchangeable with the incrcasing acceptor-like defect densities and show obvious changes with the increasing of donor-like and recombination-center-like defect densities exceeding their threshold values; under the forward bias voltage conditions, the dark I-V characteristic curves of c-Si SCs only with acceptor-like defects still show three fimdamental regions, but those of c-Si SCs only with donor-like or recombination-center-like defects show obvious changes when the densities of donor-like or recombination-center-like defects are larger than their threshold values.