中文摘要：

利用有限差分法求解半导体器件基本方程的方法,通过改变栅线电极和衬底掺杂浓度,研究了织构结构和非对称电极对晶硅电池暗Ⅰ～Ⅴ特性的影响。结果表明：衬底掺杂浓度决定了织构结构晶硅电池的pn结性质,并对其暗Ⅰ～Ⅴ特性曲线产生具有重要影响;栅线电极覆盖绒面金字塔比率相同时,晶硅电池的暗Ⅰ～Ⅴ特性曲线将出现相同的分区特性,且理想因子随绒面金字塔的增加而微幅增加;栅线电极与电池底面电极构成二极管的理想因子,随金字塔周期数增加而增大,是决定晶硅电池暗Ⅰ～Ⅴ特性曲线性质的关键因素;当衬底掺杂浓度大于等于1×10^17时,暗Ⅰ～Ⅴ特性曲线可分成三个变化区域;当衬底掺杂浓度小于1×10^17时,暗Ⅰ～Ⅴ特性曲线可分成四个变化区域;同一偏压下,衬底掺杂浓度越高,暗电流越小。此外,利用pn结处于不同偏压下的总电流密度分布,详细分析了不同区域形成的物理机制。

英文摘要：

The influences of asymmetrical electrode and texture structure on the dark Ⅰ-Ⅴ characteristics of crystalline silicon solar cell were analyzed by solving the basic equations of semiconductor device with finite difference method and changing the substrate doping concentration. The results show that the substrate doping concentration determines the properties of pn junction in crystalline silicon solar cells with texture structure and has important influences on their dark Ⅰ-Ⅴ characteristics curves, when the ratio of grid area to pyramid area is same, the sub-region properties of darkⅠ-Ⅴ characteristics curves will be same and the ideal increases as the number of pyramid period increasing, the ideal factor of the diode between grid electrode and bottom electrode, which increases as the number of pyramid period increasing are the key factor for determining the properties of these dark Ⅰ-Ⅴ characteristics curves. When the substrate doping concentration is greater than or equal to 1 × 10^17 , their dark I-V characteristic curves can be divided into three change regions. When the substrate doping concentration is less than 1 × 10^17 , their darkⅠ-Ⅴ characteristic curves can be divided into four change regions. Under the same bias voltage, the higher the substrate doping concentration, the smaller the dark current. In addition, the physicalmechanisms related with different regions are analyzed in detail by the total current density distributions of p-njunctions under different bias voltage.