中文摘要：

利用Silvaco-TCAD仿真软件全面系统地分析了发射区表面浓度（cE）、结深（xj）及发射区覆盖比率（EF）对P型前结背接触晶硅太阳电池输出特性的影响。结果表明：基于常规低成本P型晶硅衬底（利用直拉法生长，电阻率为1.5Ω·cm，少子寿命为10μs）的前结背接触太阳电池，其上表面发射区表面浓度及结深对太阳电池的输出特性产生显著影响。上表面发射区表面浓度和结深越大，短波入射光外量子效率越小。当上表面发射区表面浓度为1×10^19 cm–3，结深为0.2μm时，电池效率高达20.72%。侧面和下表面发射区表面浓度及结深对太阳电池输出特性的影响较小。但侧面和下表面发射区覆盖比率对太阳电池的输出特性产生显著影响。侧面和下表面发射区覆盖比率越大，太阳电池外量子效率和转换效率越高。

英文摘要：

By using Silvaco-TCAD simulation software, the influences of the emitter surface concentration （cE）, the junction depth （xj） and the emitter fraction （EF） on the output characteristics of P-type front junction back contact crystalline silicon solar cell was analyzed. The results show that the upper surface emitter surface concentration and the junction depth of the front junction back contact crystalline silicon solar cell based on conventional low-cost P-type silicon substrate （CZ growth method, the resistivity is 1.5Ω·cm, the minority carrier life is 10μs） have a noticeable effect on output characteristics of solar cells. The higher the upper surface emitter surface concentration, the deeper the junction depth, the lower the short wavelength incident light external quantum efficiency. When the upper surface emitter surface concentration is 1×1019 cm–3 and the junction depth is 0.2μm,the solar cell conversion efficiency reaches 20.72%. The side-surface and under-surface emitter surface concentration and the junction depth have a slight effect on output characteristics of solar cells, while the side-surface and under-surface emitter fraction has a noticeable effect on output characteristics of solar cells. The greater the side-surface and under-surface emitter fraction, the higher the external quantum efficiency and conversion efficiency.