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中文摘要：
采用射频磁控溅射技术在石英衬底上制备了Cu2O薄膜。系统研究了衬底温度对薄膜结构、光学和电学性能的影响。XRD的结果显示,在所有衬底温度条件下均可得到单相的Cu2O结构,而且随着衬底温度由500 K升至800 K,薄膜表现出（111）择优取向的生长特点。电学和光学测试结果表明,室温电导率和光学带隙随着衬底温度的升高而增加,800 K制备的薄膜的带隙值最高约为2.58 eV。
英文摘要：
The Cu2O thin films were deposited by radio-frequency（RF） magnetron sputtering at different substrate temperatures.The effect of substrate temperature on the crystal structure,optical and electrical properties were studied.The X-ray diffraction patterns show that the single-phase Cu2O was obtained and present a preferred growth orientation（111） as the substrate temperatures increased from 500 K to 800 K.The room temperature conductivity and optotical bandgap（Eg） increase as the substrate temperature increasing.The biggest Eg,2.58 eV,is achieved for the sample prepared at 800 K.
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