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Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO(2)/Si p-channel metal
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2010.9.27
  • 页码：1-3
  • 相关项目：HfMxOy/金属栅界面控制及有效功函数调制机理
作者： Wang, M.|Zhang, X. W.|Wang, W. W.|Chu, Paul K.|
同期刊论文项目
HfMxOy/金属栅界面控制及有效功函数调制机理
期刊论文 55 会议论文 3
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