位置：成果数据库 > 期刊 > 期刊详情页
Interfacial compound suppression and dielectric properties enhancement of F-N-codoped ZrO2 thin film
  • 期刊名称：Appl. Phys. Lett.
  • 时间：2007
  • 页码：082-906
  • 相关项目：HfMxOy/金属栅界面控制及有效功函数调制机理
作者： A. P. Huang |P. K. Chu|
同期刊论文项目
HfMxOy/金属栅界面控制及有效功函数调制机理
期刊论文 55 会议论文 3
同项目期刊论文
The influence on intrinsic light emission of calcium tungstate and molybdate powders by multivalence
Energy transfer processes in Tm3+-doped aluminate glass
Structure and electrical properties of HfO2 high-k films prepared by pulsed laser deposition on Si (
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin SiO2/Si pMOS stacks
Effects of plasma immersion ion nitridation on dielectric properties of HfO2
Plasma nitridated high-k polycrystalline array induced by electron irradiation
Enhanced electron field emission from oriented columnar AlN and mechanism
Fabrication of rutile TiO2 thin films by low-temperature, bias-assisted cathodic arc deposition and
Photoluminescence and Energy Transfer Study of Er3+ and Dy3+ Codoped Tellurite Glasses
Improved Infrared Emissions of Er3+-Tm3+ Co-Doped Al2O3 Thin Films: The Role of Cross Relaxation Amo
Donor doping process and white light generation in CaMoO4 powders with multivalence Pr codoping
LED光学设计的现状与展望
Application of high-k dielectrics in novel semiconductor devices
Progress of memristor modulated by interfacial effect
集成光学陀螺及相关技术研究的现状与展望
衬底温度对Cu_2O薄膜结构和性能的影响
Effects of mechanical-bending and process-induced stresses on metal effective work function
微片激光器谐振腔表面反射膜研究与展望
界面效应调制忆阻器研究进展
金属栅/高k基FinFET研究进展
p-CuCr_(0.91)Mg_(0.09)O_2/n-Si p-n结的制备与电学特性
Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorpo
Flat Band Voltage Shift in P-Channel Metal Oxide Semiconductor Field Effect Transistors
Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatban
Photoluminescence and energy transfer processes in rare earth ion doped oxide thin films with substr
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO(2)/Si p-channel metal
高k介质在新型半导体器件中的应用
p-CuCr0．91Mg0.09O2／n—Sip-n结的制备与电学特性
快慢光效应与光增益对光波导陀螺灵敏度的影响
纳米点调控氧化物忆阻器电导特性研究进展