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Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin SiO2/Si pMOS stacks
  • 期刊名称：Appl. Phys. Lett.
  • 时间：2010
  • 页码：132-908
  • 相关项目：HfMxOy/金属栅界面控制及有效功函数调制机理
作者： M. Wang|X. W. Zhang|W. W. Wang|Paul K. Chu|
同期刊论文项目
HfMxOy/金属栅界面控制及有效功函数调制机理
期刊论文 55 会议论文 3
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