中文摘要：

从调控氧化物忆阻器电导特性的主要方法与机理出发，综述了纳米点在氧化物忆阻器电导行为调制及其参数稳定性改善等方面的研究进展。针对纳米点调控氧空位的扩散迁移、电场迁移及其共同作用，分析了纳米点对氧化物忆阻器的电形成过程、开态过程和关态过程的作用机制，并讨论了其对参数均一性、耐久能力、疲劳特性、电阻比率及开关时间等参数的影响。结果表明，纳米点的引入可以显著改善忆阻器性能参数的稳定性和可控性，并进一步指出纳米点在优化其电导特性方面存在的不足和可能的解决措施，预测了性能优化的氧化物忆阻器在非易失存储、人工神经网络等领域的应用前景。

英文摘要：

From the aspects of the main methods and mechanism of modulating the conductive characteristics of the oxide memristor, the research progress of modulating the conductive behavior and improving the parameter stability of the oxide memristor by embedding nanodots are summarized. Focusing on modulating the diffusion and migration of oxygen vacancies, electric field migration and the combined effect by nanodots, the action mechanisms of the nanodots for the electric formation, set and reset processes of the oxide memristor are analyzed. And the modulation effect on the oxide memristor, such as the parameters uniformity, endurance, retention, resistance ratio, switching time and other parameters are discussed. The analysis results show that embedding nanodots can dramatically improve the stability and controllability of performance parameters for the oxide memristor. In addition the deficiency and possible solutions of the optimized methods by nanodots on the conductivity are pointed out. Finally, the application prospects of the oxide memristor with optimized performance are predicted in the fields of the non-volatile storage and artificial neural network.