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Electrical properties of MOCVD grown GaN on Si (111) substrate with low-temperature AlN interlayers
  • 期刊名称：Chinese Physics B
  • 时间：2013.2.4
  • 页码：088104-
  • 相关项目：常关型宽禁带氮化镓MOS场效应晶体管的研究
作者： Yang Fan|Xiang Peng|Zhang Baijun|Liu Yang|
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常关型宽禁带氮化镓MOS场效应晶体管的研究
期刊论文 31 专利 7
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