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Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transis
  • ISSN号：0021-4922
  • 期刊名称：Japanese Journal of Applied Physics
  • 时间：2012.5
  • 页码：01-05
  • 相关项目：常关型宽禁带氮化镓MOS场效应晶体管的研究
作者： Ni Yiqiang|Wu Zhisheng|Zhang Baijun|Liu Yang|
同期刊论文项目
常关型宽禁带氮化镓MOS场效应晶体管的研究
期刊论文 31 专利 7
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