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Nonvolatile Metal-Oxide-Semiconductor Capacitors with Ru-RuO (x) Composite Nanodots Embedded in Atom
  • ISSN号：0361-5235
  • 期刊名称：Journal of Electronic Materials
  • 时间：0
  • 页码：1343-1350
  • 语言：英文
  • 相关项目：原子层淀积高介电常数栅介质的界面层抑制和性能调控
作者： Huang, Yue|Ding, Shi-Jin|Sun, Qing-Qing|Zhang, Wei|Chen, Zhenyi|Gou, Hong-Yan|Wang, Peng-Fei|
同期刊论文项目
原子层淀积高介电常数栅介质的界面层抑制和性能调控
期刊论文 27
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