中文摘要：

采用原子层淀积（ALD）的方法在Si（100）衬底上制备了铪铝氧（HfAIO）高介电常数介质，并研究了N2和NH3退火对于介质薄膜的影响。改变原子层淀积的工艺，制备了三组含有不同Al：Hf原子比的铪铝氧（HfAIO）高介电常数介质。电容电压特性（C-V）测试表明，薄膜的积累电容密度随着薄膜中Al：Hf原子比的减少而增加。实验表明，用N2和NH3对样品进行淀积后退火，可以减小等效电容厚度（CET）、降低固定正电荷密度以及减小滞回电压，从而有效地提高了介质薄膜的电学特性。

英文摘要：

HfAIO high-k dielectrics are deposited on Si （100） by atomic layer deposition and the effects of N2 and NH3 post-deposition anneal are investigated. Through the change of ALD process, we can deposit three kinds of HfAIO film with different Al： Hf atomic ratio. The capacitance-voltage （C-V） characteristics indicate that accumulation capacitance density increases with the decrease of Al： Hf atomic ratio in HfAIO film. In addition, electrical characteristics can be improved by the N2and NH3anneal. Analytical results show that N2and NH3anneal can effectively reduce capacitance equivalent thickness （CET）, passivate bulk traps and decrease positive fixed charge.