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Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition
ISSN号:0003-6951
期刊名称:Applied Physics Letters
时间:0
页码:2630-2643
语言:英文
相关项目:原子层淀积高介电常数栅介质的界面层抑制和性能调控
作者:
Alia, M.|Scarel, G.|Lu, H. L.|Ding, Shi-Jin|Fanciulli, M.|Zhang, David Wei|
同期刊论文项目
原子层淀积高介电常数栅介质的界面层抑制和性能调控
期刊论文 27
同项目期刊论文
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A novel self-refreshable capacitorless DRAM cell and its extended applications
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Electronic structure and optical properties of Nb doped Al2O3 on Si by atomic layer deposition
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Atomic Layer Deposition of Al2O3 on H-Passivated GeSi: Initial Surface Reaction Pathways with H/GeSi
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高介电常数HfO2栅介质的制备及性能
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