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Low temperature post deposition annealing investigation for 3D charge trap flash memory by kelvin pr
  • 期刊名称：Applied Physics A
  • 时间：2015.10.11
  • 页码：1-6
  • 相关项目：面向三维集成的纳米尺度电荷陷阱存储器机理与可靠性研究
作者： Yulong Han|Xinkai Li|Tianchun Ye|Ming Liu|
同期刊论文项目
面向三维集成的纳米尺度电荷陷阱存储器机理与可靠性研究
期刊论文 24 会议论文 15
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