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Comparison between N2 and O2 anneals on the integrity of an Al2O3/SiaN4/SiO2/Si memory gate stack
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TN915.05[电子电信—通信与信息系统;电子电信—信息与通信工程] TQ127.2[化学工程—无机化工]
  • 作者机构：[1]Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China, [2]School of Electrical and Electronic Engineering, North China Electric Power University, Beijing 102206, China
  • 相关基金：Project supported in part by the National Basic Research Program of China （Grant Nos. 2010CB934200 and 2011CBA00600）, the National Natural Science Foundation of China （Grant Nos. 61176073 and 61176080）, and the Director＇s Fund of the Institute of Microelectronics, Chinese Academy of Sciences.
作者： Chu Yu-Qiong[1], Zhang Man-Hong[2], Huo Zong-Liang[1], Liu Ming[1]
关键词： 二氧化硅, 氧化铝, 退火, 整性, 堆叠, 栅极, 存储, PDA设备, charge trapping memory, post deposition anneal, endurance, traps
中文摘要：

Corresponding author. E-mail： zhangmanhong@ncepu.edu.cn Corresponding author. E-mail： huozongliang@ime.ac.cn Corresponding author. E-mail： liuming@ime.ac.cn

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406