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Study on the impact of the initialization process on the phase change memory
ISSN号:0003-6951
期刊名称:APPLIED PHYSICS LETTERS
时间:2013.5.5
页码:213503-
相关项目:Si基新型相变材料(Si-Sb-Te)及其器件基础研究
作者:
Ren, Kun|Rao, Feng|Song, Zhitang|Lv, Shilong|Zhu, Min|Wu, Liangcai|Liu, Bo|Feng, Songlin|
同期刊论文项目
Si基新型相变材料(Si-Sb-Te)及其器件基础研究
期刊论文 39
同项目期刊论文
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Study on the crystallization behaviors of Si2Sb2Tex materials
Study on TiO2-doped Ge2Te3 films for phase-change memory application
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