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Study on TiO2-doped Ge2Te3 films for phase-change memory application
  • ISSN号：0022-3727
  • 期刊名称：JOURNAL OF PHYSICS D-APPLIED PHYSICS
  • 时间：2011.4.4
  • 页码：1-3
  • 相关项目：Si基新型相变材料（Si-Sb-Te）及其器件基础研究
作者： Lu, Yegang|Song, Sannian|Song, Zhitang|Wu, Liangcai|Liu, Bo|Feng, Songlin|Guo, Xiaohui|
同期刊论文项目
Si基新型相变材料（Si-Sb-Te）及其器件基础研究
期刊论文 39
同项目期刊论文
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Study on the crystallization behaviors of Si2Sb2Tex materials
Study on the impact of the initialization process on the phase change memory
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