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中文摘要：
利用射频磁控溅射法在单晶硅片和石英基片上沉积了非晶态ZrW2O3薄膜，对不同温度下热处理的薄膜进行了XRD分析；用扫描电镜观察了薄膜的表面形貌，用阻抗分析仪和分光光度计分别研究了薄膜的介电性能和透光性能。结果表明：非晶态薄膜在740℃热处理3min可以制得具有较好负热膨胀特性的ZrW2O8薄膜，其热膨胀系数为-2．54×10^-5／℃；介电常数和介电损耗均随着频率的增加而减小；在可见光范围内薄膜的透光率达75％。
英文摘要：
Amorphous ZrW2O8 thin films were deposited on quartz and single crystal silicon substrates by using radio frequency magnetron sputtering. The as-deposited films were characterized using XRD after heat treatment at different temperatures and the surface morphology of thin films were characterized by scanning electron microscopy （SEM）. The dielectric property and light transmittance of ZrW2O8 thin films were investigated using impedance analyzer and spectrophotometer respectively. The results indicate that ZrW2 O8 thin films with negative thermal expansion property can be presented after annealing at 740 ℃ for three minutes. The calculated thermal expansion coefficient of ZrW2 O8 thin films is -2. 54 × 10^-5/℃. The dielectric constant and dielectric loss at high frequency reduced with the increase of frequency. The light transmittance reaches about 75% in the visible range.
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