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A carrier-mobility model for high-k gate- dielectric Ge MOSFETs with metal gate electrode
  • ISSN号：0026-2714
  • 期刊名称：Microelectronics Reliability
  • 时间：0
  • 页码：1081-1086
  • 语言：英文
  • 相关项目：小尺寸超薄HfTiO/GeON叠层高k栅介质Ge基MOSFET研究
作者： J. P. Xu, X. Xiao, P. T. Lai|
同期刊论文项目
小尺寸超薄HfTiO/GeON叠层高k栅介质Ge基MOSFET研究
期刊论文 30 会议论文 7
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