中文摘要：

通过在高k介质和Ge表面引入一层超薄HfN界面层,实验制备了HfO2/HfON叠层栅介质Ge MOS器件。与没有界面层的样品相比,HfO2/HfON叠层栅介质MOSFET表现出低的界面态密度、低的栅极漏电和高有效迁移率。因此利用HfON作为Ge MOS器件的界面钝化层对于获得小的等效氧化物厚度和高的high-k/Ge界面质量有着重要的意义。

英文摘要：

HfO2/HfON/Ge MOS devices were fabicated by intoducing an ultral thin layer of HfN to improve the quality of high-k/Ge interface.As compared to the sample without HfON interlayer,the Ge MOSFET with HfO2/HfON gate stack shows some improvement properties,such as low interface state density and gate leakage current,and excellent output characteristics and high effective hole mobility.Therefore,it is an effective method to use HfON as a passive interlayer on Ge in MOS devices.