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Improved Interfacial Properties of Ge MOS Capacitor with High-k Dielectric by using TaON/GeON Dual I
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：0
  • 页码：122-124
  • 语言：英文
  • 相关项目：小尺寸超薄HfTiO/GeON叠层高k栅介质Ge基MOSFET研究
作者： F. Ji, J. P. Xu, P. T. Lai, C. X. Li, J. G. Liu|
同期刊论文项目
小尺寸超薄HfTiO/GeON叠层高k栅介质Ge基MOSFET研究
期刊论文 30 会议论文 7
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