位置：成果数据库 > 期刊 > 期刊详情页
Effects of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k di
  • 期刊名称：Chinese Phys
  • 时间：0
  • 页码：3820-3826
  • 语言：中文
  • 相关项目：小尺寸超薄HfTiO/GeON叠层高k栅介质Ge基MOSFET研究
作者： X. F. Zhang, J. P. Xu, P. T. Lai, C. X. Li|
同期刊论文项目
小尺寸超薄HfTiO/GeON叠层高k栅介质Ge基MOSFET研究
期刊论文 30 会议论文 7
同项目期刊论文
Improved electrical properties of Ge metal-oxide- semiconductor capacitors with high-k HfO2 gate die
Improved electrical properties of HfTiO/ GeOxNy gate dielectric Ge MOS capacitors by using wet-NO Ge
Electrical properties of Ge metal-oxide- semiconductor capacitors with La2O3 gate dielectric anneale
A carrier-mobility model for high-k gate- dielectric Ge MOSFETs with metal gate electrode
Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin hig
Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric
A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric
退火气氛对Ge MOS电容电特性的影响
超薄高k栅介质Ge-pMOSFET的电特性研究
表面钝化对Ge MOS电容可靠性的影响
不同界面层对HfTaON栅介质MOS特性的影响
Use of water vapor for suppressing the growth of unstable low-k interlayer in HfTiO gate- dielectric
Improved Interfacial Properties of Ge MOS Capacitor with High-k Dielectric by using TaON/GeON Dual I
考虑库伦散射屏蔽效应的Si1-xGex pMOSFET低场空穴迁移率模型
HfTiO高k栅介质Ge MOS电容特性研究
A physical model on scattering at high-k dielectric/SiO2 interface of SiGe p-MOSFETs
表面预处理对Ge MOS电容特性的影响
HfO2/TaON叠层栅介质Ge MOS器件制备及电性能研究
叠层高k栅介质中远程界面粗糙散射的理论模型
应变SiGe沟道PMOSFET阈值电压模型
考虑库仑散射屏蔽效应的Si1-xGex pMOSFET低场空穴迁移率模型
HfTiO高κ栅介质Ge MOS电容特性研究
HfO2/TaON叠层栅介质Ge pMOSFET制备及迁移率退化研究
超薄HfN界面层对HfO2栅介质Ge pMOSFET电性能的改进
TaON界面层Hf基高κ栅介质Ge MOS电容特性研究
一种低功耗高稳定性晶体振荡器芯片的设计