中文摘要：

为提高高k/Ge MOS器件的界面质量,减小等效氧化物厚度（EOT）,在high-k介质和Ge表面引入薄的TaON界面层。相对于没有界面层的样品,HfO2/TaON叠层栅介质MOSFET表现出低的界面态密度、低的栅极漏电和较好的输出特性。因此利用TaON作为Ge MOS器件的界面钝化层对于获得小的等效氧化物厚度和高的高k/Ge界面质量有着重要的意义。

英文摘要：

In order to improve the quality of interface and reduce the equivalent oxide thickness（EOT） of high-k/Ge MOS devices,a ultra thin TaON interlayer was introduced between high-k dielectric and Ge.Compared with the samples without the TaON interlayer,the Ge MOSFETs with HfO2/TaON gate stacks show some improvement properties,such as the low interface state density,low gate leakage current and excellent output characteristics.Therefore,it is an effective method using TaON as a passive layer on Ge in MOS devices to obtain the small equivalent oxide thickness and high quality of interface of high-k/Ge.