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A physical model on scattering at high-k dielectric/SiO2 interface of SiGe p-MOSFETs
  • 期刊名称：IEEE Trans. on Electron Devices
  • 时间：0
  • 页码：3097-3102
  • 语言：英文
  • 相关项目：小尺寸超薄HfTiO/GeON叠层高k栅介质Ge基MOSFET研究
作者： X. F. Zhang, J. P. Xu, P. T. Lai, C. X. Li|
同期刊论文项目
小尺寸超薄HfTiO/GeON叠层高k栅介质Ge基MOSFET研究
期刊论文 30 会议论文 7
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