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中文摘要：
为提高high-k/Ge界面质量,在high-k介质和Ge表面引入薄的TaON界面层。相对于没有界面层的样品,HfO2/TaON叠层栅介质Ge pMOSFET样品的空穴迁移率有显著提高,但仍小于理论预测值。利用high-k栅介质MOSFET中各种新的附加散射机制,分析了迁移率退化的原因,模型计算结果与实验结果一致。
英文摘要：
In order to improve the quality of interface at high-k/Ge,an ultrathin TaON layer is introduced between high-k dielectric and Ge.As compared to the sample without TaON interlayer,the Ge pMOSFET with HfO2/TaON gate stack shows a great increase of effective hole mobility.The theoretical analysis is carried out using the models on some extra scattering mechanisms and the calculated results agree well with experimental ones.
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