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Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric
  • 期刊名称：Solid-State Electronics, vol. 54, pp. 675-679. 201
  • 时间：0
  • 页码：675-679
  • 语言：英文
  • 相关项目：小尺寸超薄HfTiO/GeON叠层高k栅介质Ge基MOSFET研究
作者： C. X. Li, C. H. Leung, P. T. Lai, J. P. Xu|
同期刊论文项目
小尺寸超薄HfTiO/GeON叠层高k栅介质Ge基MOSFET研究
期刊论文 30 会议论文 7
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