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Improved electrical properties of HfTiO/ GeOxNy gate dielectric Ge MOS capacitors by using wet-NO Ge
  • 期刊名称：Appl. Phys. A
  • 时间：0
  • 页码：419-422
  • 语言：英文
  • 相关项目：小尺寸超薄HfTiO/GeON叠层高k栅介质Ge基MOSFET研究
作者： J. P. Xu, X. Zou, C. X. Li, P. T. Lai, C. L. Chan|
同期刊论文项目
小尺寸超薄HfTiO/GeON叠层高k栅介质Ge基MOSFET研究
期刊论文 30 会议论文 7
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