位置：成果数据库 > 期刊 > 期刊详情页
RESET Distribution Improvement of Phase Change Memory: The Impact of Pre-Programming
  • ISSN号：7413-106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2014.3.14
  • 页码：536-538
  • 相关项目：纳米复合相变存储材料Si-Sb2Te3的相转变机理研究
作者： Y.C. Wang, X.G. Chen, Y. Cheng, X.L. Zhou, S.|G.M. Feng|
同期刊论文项目
纳米复合相变存储材料Si-Sb2Te3的相转变机理研究
期刊论文 29
同项目期刊论文
Study on GeGaSbTe film for long data retention phase change memory application
Understanding the early cycling evolution behaviors for phase change memory application
Investigation of Sb-rich Sb-Te binary films used as phase change material
Nitrogen-doped Sb-rich Si-Sb-Te phase-change material for high performance phase-change memory
Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/ BCl3 inductively coupled plasmas
Influence of silicon on the thermally-induced crystallization process of Si-Sb4Te phase change mater
Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory
Characterization of the thermal properties for Si-implanted Sb2Te3 phase change material
Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory applicati
Crystallization behavior of Ge2Te3-TiO2 film for phase-change random access memory application
Etching of new phase change material Ti0.5Sb2Te3 by Cl2/Ar and CF4/Arinductively coupled plasmas
Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memor
Electron beam annealing for component optimization in Si-Sb-Te material
基于相变存储器器件单元的电流脉冲测试系统
基于相变存储器的SD卡系统设计
Ge_2Sb_2Te_5的化学机械抛光研究进展
Endurance characteristics of phase change memory cells
DOIND： a technique for leakage reduction in nanoscale domino logic circuits
The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
操作电流对相变存储器单元疲劳特性的影响
带轻载变频模式的升压式DC-DC转换器设计
基于二极管单元的高密度掩模ROM设计
Direct observation of metastable face-centered cubic Sb2Te3 crystal
A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology
Thermal effect of Ge2Sb2Te5 in phase change memory device
Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry
相变存储器失效时间分析