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Study on GeGaSbTe film for long data retention phase change memory application
  • ISSN号：2230-93
  • 期刊名称：Journal of Non-Crystalline Solids
  • 时间：2013.10.8
  • 页码：54-57
  • 相关项目：纳米复合相变存储材料Si-Sb2Te3的相转变机理研究
作者： Z.H. Zhang|S.N. Song|Z.T. Song|Y. Cheng|Y.F. Gu|L.C. Wu|B. Liu|S.L. Feng|
同期刊论文项目
纳米复合相变存储材料Si-Sb2Te3的相转变机理研究
期刊论文 29
同项目期刊论文
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Influence of silicon on the thermally-induced crystallization process of Si-Sb4Te phase change mater
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Characterization of the thermal properties for Si-implanted Sb2Te3 phase change material
Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory applicati
RESET Distribution Improvement of Phase Change Memory: The Impact of Pre-Programming
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Electron beam annealing for component optimization in Si-Sb-Te material
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Ge_2Sb_2Te_5的化学机械抛光研究进展
Endurance characteristics of phase change memory cells
DOIND： a technique for leakage reduction in nanoscale domino logic circuits
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Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
操作电流对相变存储器单元疲劳特性的影响
带轻载变频模式的升压式DC-DC转换器设计
基于二极管单元的高密度掩模ROM设计
Direct observation of metastable face-centered cubic Sb2Te3 crystal
A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology
Thermal effect of Ge2Sb2Te5 in phase change memory device
Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry
相变存储器失效时间分析