中文摘要：

研究了真空热处理对掺CH4的SiCOH低介电常数薄膜的电流-电压（I-V）特性、电容-电压（C-V）特性、疏水性能以及微结构的影响.结果表明：在热处理过程中,热稳定性较差的碳氢基团发生了热解吸,使薄膜的漏电流减小、绝缘性能改善,并使薄膜的导电行为更趋于空间电荷限流过程.碳氢基团的热解吸使SiCOH/Si界面的界面态发生改变,导致SiCOH薄膜MIS结构的平带电压VFB发生漂移.封端的碳氢基团热解吸使薄膜表面的开口孔结构减少,薄膜表面变得更平整.但是碳氢基团为疏水基团,其热解吸导致薄膜的疏水性能降低.

英文摘要：

This paper investigates the effect of vacuum thermal treatment on current-voltage（I-V） and capacitance-voltage（C-V） characteristics,hydrophobic properties and microstructure of CH_4 doped SiCOH low dielectric constant films deposited by decamethylcyclopentasiloxane（D5） electron cyclotron resonance plasma.The results show that the desorption of thermally unstable CH_x groups during the heat treatment can lead to the decrease of leakage current,the variation of SiCOH/Si interface state and the decrease of surface roughness.However,the desorption of CH_x groups also leads to the deterioration of hydrophobic property.