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中文摘要：
通过对SiCOH低k薄膜刻蚀后的表面状态分析、等离子体空间活性基团分析,并通过调节刻蚀时的离子轰击能量,从实验上研究了碳氟等离子体刻蚀SiCOH低k薄膜的基本过程,发现刻蚀过程中SiCOH薄膜表面的C：F沉积、到达SiCOH薄膜表面的F原子密度以及传递到SiCOH薄膜表面的能量是决定SiCOH薄膜刻蚀的主要因素,符合Sankaran的碳氟等离子体刻蚀SiO2薄膜模型.在等离子体空间的CF2基团浓度较低、F基团浓度较高时,并且施加给待刻蚀薄膜的偏置功率较高时,SiCOH薄膜表面沉积的C：F薄膜层较薄,有利于等离子体空间的F基团和离子轰击薄膜的能量传递到SiCOH薄膜表面,从而使SiCOH薄膜表面的F、Si反应几率增大,实现SiCOH薄膜的有效刻蚀.
英文摘要：
The etching characteristics of SiCOH low dielectric constant（low-k） films in the CHF3 60MHz/2MHz dual-frequency capacitively couple plasma（CCP） was investigated.By the surface analysis on SiCOH low-k films after etching,the optical diagnostic on discharge plasma and by adjusting the ions bombardment energy on the SiCOH low-k films surface,the etching behavior is found to follow the Sankaran＇s model on SiO2 etching by fluorocarbon plasma.In the case of low CF2 and high F concentration and high ions bombardment energy,the suppressing of C：F deposition at the surface of etched films is of advantage to the F radicals transport and the activation energy delivering to the C：F-SiCOH film interface.The better etching of SiCOH low-k films can be obtained.
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