Effect of Low-frequency Power on F, CF2 Relative Density and F/CF2 Ratio in Fluorocarbon Dual-Frequency Plasmas
- ISSN号:1009-0630
- 期刊名称:《等离子体科学与技术:英文版》
- 时间:0
- 分类:O53[理学—等离子体物理;理学—物理] TL631.24[核科学技术—核技术及应用]
- 作者机构:[1]School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films,Soochow University, Suzhou 215006, China
- 相关基金:supported by National Natural Science Foundation of China (Nos. 10975105, 10575074, 10635010)
关键词:
等离子体密度, 相对密度, 低频率, 电子能量分布函数, 双频, 电力, 氟碳, CHF3, fluorocarbon plasma, dual-frequency discharge, low-k films etching