中文摘要：

非晶碳化硅薄膜的结构可调制性及化学稳定性使它可用作超低k多孔介电薄膜的扩散阻挡层。主要改变了SiH4（80％Ar稀释）和CH4气体流量比R（R=[CH4]／（[CH4]＋[SiH4]）），使用微波电子回旋共振化学气相沉积法制备了非化学计量比的非晶碳化硅薄膜（a-Si1-xCx：H）。薄膜沉积过程中放电等离子体的各基团行为由等离子体的发射光谱监测，而薄膜的结构与性能则由傅立叶变换红外光谱、紫外可见光谱等来表征。结果表明，在等离子体发射光谱中H、CH谱线强度随CH4流量的增加而增强，而SiH谱线强度则呈现相反的变化趋势。红外结构表明随着气体流量比R的增加，薄膜由富硅态向富碳态转变，薄膜结构的转变是薄膜光学带隙及其介电常数变化的根本原因。

英文摘要：

The structural modulability and chemical stability of hydrogenated amorphous silicon carbide （a- SixC1-x： H） films makes it suitable as a barrier layer for low k porous dielectric films. We have prepared a- SixC1-x ： H films using micro-wave electron cyclotron resonance chemical vapor deposition（ECRCVD） method under different gas flow ratios R { R = [CH4 ]/（[CH4 ] ＋ [SiH4 ] ＋ [ Ar]）}. The plasma properties, structural evolution and properties of the prepared a-SixC1-x t H films were investigated by an optical emission spectroscopy （OES）,fourier transform infrared spectroscopy （FTIR） and ultraviolet visible （UV-Vis） spectrometer, respectively. OES illustrates that H and CH emission intensities increase with R while that of Sill decrease. The structural analysis of FTIR shows that the a-SixC1-x ： H films turned from silicon-rich state to carbon-rich state with the increase of R. The phase and composition evolution of the a-SixC1-x： H film is the critical factor that leads to the change of the film＇s optical band gap and dielectric constant.