位置：成果数据库 > 期刊 > 期刊详情页
improvement of electrical properties of Cu/SiCOH low-k film integrated system by O2 plasma treatment
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TN304.24[电子电信—物理电子学] TN43[电子电信—微电子学与固体电子学]
  • 作者机构：[1]School of Physics Science and Technology, Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China, [2]Institute of Modern Physics, Fudan University, Shanghai 200433, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant No 10575074）, the Specialized Research Fund for the Doctoral Program of Higher Education of China and the Foundation of Key Laboratory of Thin Films, Jiangsu Province, China.
作者： 钱晓梅[1], 卫永霞[1], 俞笑竹[1], 叶超[1], 宁兆元[1], 梁荣庆[2]
关键词： 等离子体处理, 多孔Cu/SiCOH膜, 集成电路, 介电常数, 电学性质, 改进, porous SiCOH film, O2 plasma treatment, electrical property
同期刊论文项目
纳电子器件中超低k多孔SiCOH薄膜的ECR等离子体加工及相关复杂性研究
期刊论文 28 会议论文 1
同项目期刊论文
Intermediate gas phase of CH4/[Si(CH3)2O]5 plasma and its effect on SiCOH films structure
Structure characterization of HSQ films for low dielectric uses D4 as sacrificial porous materials
O2掺杂对SiCOH低k薄膜结构与电学性能的影响
Si-OH基团对SiCOH低k薄膜性能的影响与控制
Mass spectrometry investigation on decamethylcyclopentasiloxane electron cyclotron resonance plasma
Control of the discharge chemistry of CHF3 in dual-frequency capacitively coupled plasmas
Effect of doping on structure and dielectric property of SiCOH films prepared by decamethylcyclopent
Improvement of electrical properties of Cu/SiCOH low-k films integrated system by O2 plasma treatmen
Effect of low-frequency power on etching of SiCOH low-k films in CHF3 13.56MHz/2MHz dual-frequency c
CHx掺杂SiCOH 低介电常数薄膜的物性热稳定性分析
微波电子回旋共振法沉积的非晶碳化硅薄膜结构和性能研究
Investigation on CHF3 Dual-Frequency Capacitively Coupled Plasma by Optical Emission Spectroscopy
旋转涂覆法(SOD)制备硅基多孔低k薄膜材料的研究进展
Structure characterization of HSQ films for low dielectrics using D5 as sacrificial porous materials
纳电子器件中的超低介电常数材料与多孔SiCOH薄膜研究
CHF3双频电容耦合放电等离子体特性研究
CHx掺杂SiCOH低介电常数薄膜的物性热稳定性分析
CHF3／DMCPS比对F掺杂SiCOH薄膜结构及性能的影响
C_2F_6、C_4F_8的双频电容耦合等离子体特性研究
CHF_3等离子体刻蚀SiCOH低k薄膜的机理分析
Intermediate Gas Phase of CHa/[Si（CH3）2O]5 Plasma and Its Effect on Structure of SiCOH Film
O_2流量对O_2/C_4F_8等离子体刻蚀SiCOH低k薄膜的影响
Effect of CHF3 Plasma Treatment on the Characteristics of SiCOH Low-k Film
Structural evolution of silicone oil liquid exposed to Ar plasma
Effect of F doping on capacitance-voltage characteristics of SiCOH low-k films metal-insulator-semiconductor structure
Effect of C：F Deposition on Etching of SiCOH Low-k Films in CHF3 60 MHz/2 MHz Dual-Frequency Capacitively Coupled Plasma
Effect of Low-frequency Power on F, CF2 Relative Density and F/CF2 Ratio in Fluorocarbon Dual-Frequency Plasmas
期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406