中文摘要：

65nm以下线宽的纳电子器件，要求采用介电常数k小于2的超低介电常数材料作为层间和线间绝缘介质，等离子体增强的化学气相沉积技术制备的硅基纳米多孔薄膜，提供了实现k〈2的可能性，多孔SiCOH薄膜成为最具希望的候选材料，但是，纳米孔的引入带来了材料其他性能恶化、集成工艺困难、薄膜微结构分析等许多新问题．文章介绍了多孔SiCOH（超）低k薄膜研究的主要进展及面临的挑战．

英文摘要：

For sub 65nm nano-electronic devices, a continuous shrinking of dielectric constant is needed and the k-value below 2.0 should be achieved for the insulator between interconnect. The k-value for silicon-based nano-porous films prepared by plasma enhanced chemical vapor deposition can be reduced to below 2. O. The porous SiCOH film becomes the most promising candidate in the many ultra-low-k materials. However, the formation of nano-pores in the films also brings many problems, such as the deterioration of mechanical and thermal stability, the difficulty in integration, and the difficulty in microstructures analysis. This paper presents a review of advances in SiCOH ultra-low-k film and interconnect challenges for sub 65nm generation.