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Effect of F doping on capacitance-voltage characteristics of SiCOH low-k films metal-insulator-semiconductor structure
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TQ325.4[化学工程—合成树脂塑料工业] TN303[电子电信—物理电子学]
  • 作者机构：[1]School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant No. 10575074）.
作者： 叶超[1], 宁兆元[1]
关键词： 半导体结构, 电压特性, 电容电压, 绝缘体, 薄膜, 金属, 电子回旋共振等离子体, 兴奋剂, F-SiCOH, low-k dielectrics, capacitance-voltage characteristic
中文摘要：

Corresponding author. E-mail cye@suda.edu.cn

同期刊论文项目
纳电子器件中超低k多孔SiCOH薄膜的ECR等离子体加工及相关复杂性研究
期刊论文 28 会议论文 1
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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406