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Characterization of the nanosized porous structure of black Si solar cells fabricated via a screen printing process
  • ISSN号:1674-4926
  • 期刊名称:《半导体学报:英文版》
  • 时间:0
  • 分类:O484.1[理学—固体物理;理学—物理] TM914.41[电气工程—电力电子与电力传动]
  • 作者机构:[1]Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy ofSciences, Beijing 100190, China, [2]Graduate University of the Chinese Academy of Sciences, Beijing 100049, China, [3]Eoplly New Energy Technology Co., Ltd., Nantong 226602, China
  • 相关基金:supported by the Knowledge Innovation Program of the Chinese Academy of Sciences(No.KGCX2-YW-382); the National Program on Key Basic Research Project of China(No.2010CB933804)
中文摘要:

<正>A silicon(Si) surface with a nanosized porous structure was formed via simple wet chemical etching catalyzed by gold(Au) nanoparticles on p-type Cz-Si(100).The average reflectivity from 300 to 1200 nm was less than 1.5%.Black Si solar cells were then fabricated using a conventional production process.The results reflected the output characteristics of the cells fabricated using different etching depths and emitter dopant profiles.Heavier dopants and shallower etching depths should be adopted to optimize the black Si solar cell output characteristics. The efficiency at the optimized etching time and dopant profile was 12.17%.However,surface passivation and electrode contact due to the nanosized porous surface structure are still obstacles to obtaining high conversion efficiency for the black Si solar cells.

英文摘要:

A silicon(Si) surface with a nanosized porous structure was formed via simple wet chemical etching catalyzed by gold(Au) nanoparticles on p-type Cz-Si(100).The average reflectivity from 300 to 1200 nm was less than 1.5%.Black Si solar cells were then fabricated using a conventional production process.The results reflected the output characteristics of the cells fabricated using different etching depths and emitter dopant profiles.Heavier dopants and shallower etching depths should be adopted to optimize the black Si solar cell output characteristics. The efficiency at the optimized etching time and dopant profile was 12.17%.However,surface passivation and electrode contact due to the nanosized porous surface structure are still obstacles to obtaining high conversion efficiency for the black Si solar cells.

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期刊信息
  • 《半导体学报:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编:李树深
  • 地址:北京912信箱
  • 邮编:100083
  • 邮箱:cjs@semi.ac.cn
  • 电话:010-82304277
  • 国际标准刊号:ISSN:1674-4926
  • 国内统一刊号:ISSN:11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘(网络版),荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊(2004版),中国北大核心期刊(2008版),英国英国皇家化学学会文摘,中国北大核心期刊(2000版)
  • 被引量:7754