欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
采用化学气相沉积方法,以金做催化剂,在Si（100）衬底上制备了掺AlZnO纳米线阵列.扫描电子显微镜（SEM）表征发现ZnO纳米线的直径在30nm左右.X射线衍射（XRD）图谱上只存在ZnO的（002）衍射峰,说明ZnO纳米线沿c轴择优取向.掺AlZnO纳米线阵列的室温光致发光（PL）谱中出现了3个带边激子发射峰：373nm,375nm,389nm.运用激子理论推算出掺AlZnO纳米线的禁带宽度为3.343eV,束缚激子结合能为0.156eV;纯ZnO纳米线阵列PL谱中3个带边激子发射峰为377nm,379nm,389nm.其禁带宽度为3.301eV,束缚激子结合能为0.113eV.通过比较发现掺Al增大了ZnO纳米线的禁带宽度.
英文摘要：
Al-doped ZnO nanowire arrays were synthesized with Au catalysis on Si（100） substrate using the chemical vapor deposition technique. Only （002） diffraction peaks of ZnO can be found in the XRD patterns of the samples, which shows that the as-grown nanowires are highly crystalline in nature and grow along the [001] direction. The SEM images show that the ZnO nanowires are perpendicular to the substrate surface. Room-temperature photoluminescence （PL） measurement shows 3 near band-edge emission peaks at 373, 375 and 389？nm. Analysis shows that the band gap of Al-doped ZnO nanowaires is 3.343eV and the exciton binding energy is 0.156？eV. Room-temperature PL spectrum of pure ZnO nanowaires shows 3 near band-edge emission peaks at 377, 379 and 389？nm. The band gap of pure ZnO nanowaires is 3.301？eV and the exciton binding energy is 0.113eV, which shows that the band gap increases due to Al doping.
同期刊论文项目
同项目期刊论文
期刊信息
位置：