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中文摘要：
理论考察了存在强内建电场的纤锌矿GaN/InxGa1-xN耦合量子阱体系的二次谐波产生（SHG）特性,结果发现共振SHG系数达到了10^-7m/V的量级,SHG系数对耦合量子阱的结构与掺杂组份呈现非单调的依赖关系.结果还表明,通过选择小尺寸垒宽与大尺寸阱宽的耦合量子阱,并适当降低掺杂组份,可在氮化物耦合量子阱中获得较强的SHG极化率.
英文摘要：
The second-harmonic, generation （SHG） susceptibility of a wurtzite GaN/In, Ga1-x N coupling quantum well （CQW） with strong built-in electric field was theoretically investigated. The calculated results reveal that the resonant SHG coefficients reach the order of magnitude of 10^-7 m/V and the SHG coefficients are not monotonic functions of the well width, barrier width and the doped concentration of the CQW systems. Our results also show that a strong SHG coefficient can be obtained in the nitride CQW by choosing optimized structural parameters and doped fraction. n
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