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中文摘要：
在不同温度条件下，利用低压金属有机源化学气相沉积（LP-MOCVD）系统制备ZnO薄膜，对在氧源离化和非离化两种状态下生长的ZnO薄膜材料进行了相关的研究比较．通过X射线衍射（XRD）、原子力显微镜（AFM）、低温光致发光谱等方法研究了离化参数与生长速率、晶体质量、表面结构以及光学特性之间的相互关系，研究发现射频等离子体离化对薄膜生长速率等参数有明显的影响，通过优化相关离化实验参数可以极大的改进和提高材料的结构和光学性质．
英文摘要：
ZnO thin films were deposited with low-pressure MOCVD at different substrate temperatures. The effects of oxygen source ionization on the growth and properties of MOCVD ZnO material were investigated. The crystal structure and surface morphology of ZnO films were characterized by X-ray diffraction and atomic force microscopy, respectively. Room temperature and low temperature photoluminescence were used to investigate the optical properties of ZnO. It was found that the ionization of the oxygen source has a marked influence on the growth rate, crystal orientation,surface morphology, and other properties.
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