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中文摘要：
在无催化剂条件下，采用化学气相沉积（CVD）方法在蓝宝石（110）衬底上制备了ZnO纳米线．X射线衍射（XRD）图谱上只有ZnO的（100）衍射峰和（110）衍射峰．扫描电子显微镜分析表明，ZnO纳米线在蓝宝石衬底上水平生长.在样品上蒸镀了金叉指电极，以256nm的紫外光作为光源，测试了样品的紫外光敏感性能，研究表明水平生长的ZnO纳米线对紫外光具有较快的响应，在5V偏压下，光电流与暗电流比为30；当波长为354nm时光响应度达到最大值为0．56A／W．
英文摘要：
ZnO nanowires were synthesized without any kind of catalyst on a-plane sapphire substrate by chemical vapor deposition （CVD）.Only the （100） and （101） diffraction peaks of ZnO were found on the XRD patterns of the samples. SEM images show that the ZnO nanowires are parallel to the sapphire substrate. Following the deposition of Au finger electrodes on the samples, the samples＇ UV-sensitive performance was detected with a wavelength of illumination of 256nm. The results show that the ZnO nanowires respond very fast to UV-light, the ratio of photo current to dark current is about 30 at 5V, and the maximum photo-responslbility is of 0. 56 A/W at 354nm.
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