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中文摘要：
采用溶胶-凝胶法在硅（100）和玻璃衬底上制备了掺铝氧化锌（ZnO：Al）薄膜．当掺Al^3＋浓度小于或等于15％时，得到的薄膜均为单一c轴取向．c轴晶格常数随掺Al^3＋浓度的增加逐渐减小，当掺Al^3＋浓度增至15％时，薄膜c轴晶格常数值减小约0．56％．薄膜的光学带隙随掺Al^3＋浓度的增加而增大，掺Al3＋20％的薄膜光学带隙达到3．99eV．O1s结合能随掺Al^3＋浓度的增加而增大．
英文摘要：
ZnO：Al thin films were deposited onto silicon （100） and glass substrates by sol-gel process. The Aldoped ZnO thin films with doping level below 15% showed only c-axis orientation. The c axis constant decreased with in creasing Al content, and the c-axis constant of ZnO：Al thin films with Al content of 15% decreased by about 0.56% compared with that of ZnO crystal. The optical band-gap showed evidently blueshift with increasing the Al^3＋ concentration. For the sample doped with 20% Al^3＋ content, the optical band-gap energy reached 3.99 eV. The binding energy of Ols increased with increasing Al content.
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