中文摘要：

以Zn4（OH）2（O2CCH3）6·2H2O为单一固相有机源，采用单源化学气相沉积法（Single source chemical vapor deposition，SSCVD）在Si（100）衬底上制备ZnO薄膜，用X射线衍射（XRD）、原子力显微镜（AFM）分析ZnO薄膜样品的晶体结构和微观形貌，并用X射线光电子能谱（XPS）对薄膜的锌氧化学计量比进行了分析。研究结果表明：在非平衡条件下所得到的ZnO薄膜沿a-b轴取向生长，基片温度对ZnO薄膜生长过程影响较大，随着基片温度的升高，薄膜呈现c轴生长趋势；晶粒成柱状、尺寸均匀、膜层结构致密；薄膜样品中nZn：n0=0．985。

英文摘要：

Znic oxide is a Ⅱ-Ⅵ compound semiconductor with wurtzite structure. This film has many applications due to its large band gap, high exciton binding energy, positive optical and electrical properties. Thin films of zinc oxide have been prepared using various deposition methods, including RF sputtering, metal organic chemical deposition （ MOCVD）, pulsed laser deposition （PLD） , molecular beam epitaxy （ MBE）, solgel, and so forth. ZnO thin films prepared by those methods usually exhibit （002） orientation with c-axis perpendicular to the substrate due to the lower surface free energy for （002） plane. The a-b axis preferred orientation is seldom reported because of it＇s difficult to be formed. But as a novel preferred orientation, it maybe bring us new applications such as surface acoustic wave device （SAW）. The single source chemical vapor deposition （SS CVD ） technique is a useful method to form films, because it employs comparatively simple deposition equipment, and generate thin films at moderate temperatures and low vacuum ambient. We reported that ZnO thin film with a-b axis orientation was prepared by single source chemical vapor deposition （SS CVD） using Zn4 （OH）2 （O2CCH3）6 · 2H2O as the precursor. The deposited ZnO layers on Si （100） semiconductor substrate were investigated with respect to the crystalline phase by X-ray diffraction （XRD）, the micro-morphology by atom force microscope （AFM）, and the stoichiometry by X-ray photoelectron spectroscopy （XPS）. The results show that ZnO thin film with a-b axis was prepared under low substrate temperature of 350℃. The weak peak of ZnO （002） appeared while the substrate temperature enhanced to 450 ℃. The average grain size of ZnO is about 170 nm. ZnO films are stoichiometric with O/Zn atomic ratio （0. 985 ） which very close to that of ZnO single crystal.