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中文摘要：
采用Sol-gel法使用旋转涂覆技术在Si（100）基片上生长了ZnO：Cd薄膜.XRD结果表明：ZnO：Cd薄膜具有与ZnO一样的六角纤锌矿结构,随热处理温度的升高,（002）衍射峰强度逐增,FWHM减小,并沿c轴择优取向生长;透射光谱实验表明：以石英为基底,适度掺镉可降低薄膜的禁带宽度Eg,特别是在800℃、8%Cd条件下,Eg=2.80eV,与纯ZnO的禁带宽度3.30eV相比,明显降低了光学禁带;光致发光谱（PL）实验表明：在吸收边附近均有较强的紫外发射峰,且随热处理温度升高呈规律的变化;电阻率测定表明：掺镉使薄膜导电性增强.
英文摘要：
ZnO ： Cd films are prepared on Si（100） substrates by the Sol-gel process using a spinning-technical. The films show a hexagonal wurtzite structure and C-axis orientation as observed by XRD. With the increase of heat-treating temperature, the intensity of diffraction peak increases and FWHM reduces. Optical transmittance spectra of ZnO ： Cd films on quartz substrates indicate that bandgap of the film at 8 at%Cd under 800℃ annealing temperature is 2. 80eV. The bandgap is apparently narrower than that of ZnO bulk crystal（3. 30eV）. The PL spectra show that all ZnO： CA thin films emit strong UV photoluminescence at room temperature and the emission band turns regular change with the heat-treating temperature increasing. Surface resistance shows that the CA-doped way makes the electric property of ZnO thin films improved.
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