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The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers
  • ISSN号：0022-3727
  • 期刊名称：Journal of Physics D-Applied Physics
  • 时间：0
  • 页码：278-284
  • 语言：英文
  • 相关项目：位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理
作者： H.|J. J.|D. S.|Jiang|Zhu|Yang|Qiu|Wang|Zhang|D. G.|J. H.|Liu|S. M.|L. J.|Zhao|Y. X.|Z. S.|
同期刊论文项目
位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理
期刊论文 56 专利 4
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