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An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN
  • ISSN号：0925-8388
  • 期刊名称：Journal of Alloys and Compounds
  • 时间：0
  • 页码：461-464
  • 语言：英文
  • 相关项目：位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理
作者： Zhang|Hui|Q. J.|Wang|H.|Y. T.|D. G.|S. M.|D. S.|Zhao|J. J.|Zhu|Jia|Jiang|Yang|Z. S.|Liu|
同期刊论文项目
位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理
期刊论文 56 专利 4
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