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Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and op
  • ISSN号：0921-4526
  • 期刊名称：Physica B-Condensed Matter
  • 时间：0
  • 页码：4668-4672
  • 语言：英文
  • 相关项目：位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理
作者： Qiu|Wang|H.|Zhu|Liu|D. S.|Z. S.|D. G.|S. M.|U.|Zhao|Y. X.|J. J.|Yang|Jiang|Zhang|Jahn|
同期刊论文项目
位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理
期刊论文 56 专利 4
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Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films
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Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area
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高阻氮化镓外延层的异常光吸收
p-GaN层厚度对GaN基p-i-n结构紫外探测器性能的影响
Time delay in InGaN multiple quantum well laser diodes at room temperature
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si （111） substrate with AlGaN interlayer
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapordeposition
Microstructure and strain films using in-plane grazing analysis of GaN epitaxial incidence x-ray diffraction
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
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