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Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemi
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetec
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) s
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and op
Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffract
Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime o
Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic c
Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors
Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Mult
The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in
Defect evolution and accompanied change of electrical properties during the GaN growth by metalorgan
The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers
Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition
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