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Fabrication and optical characterization of GaN-based nanopillar light emitting diodes
ISSN号:0256-307X
期刊名称:Chinese Physics Letters
时间:0
页码:3485-3488
语言:英文
相关项目:位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理
作者:
Duan Li-Hong|Jiang De-Sheng|Wang Hai|Zhang Shu-Ming|Shi Yong-Sheng|Liu Su-Ying|Zhao De-Gang|Yang Hui|Zhu Ji-Hong|Sun Xian|Zhu Jian-Jun|Liu Zong-Shun|
同期刊论文项目
位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理
期刊论文 56
专利 4
同项目期刊论文
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemi
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetec
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light
Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) s
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN
Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer
Time delay in InGaN multiple quantum well laser diodes at room temperature
Abnormal photoabsorption in high resistance GaN epilayer
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and op
The fabrication of GaN-based nanopillar light-emitting diodes
Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffract
Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime o
Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic c
Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors
Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Mult
Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature
The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods
Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in
An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area
InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer
GaN-based violet laser diodes grown on free-standing GaN substrate
Defect evolution and accompanied change of electrical properties during the GaN growth by metalorgan
The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers
Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector
A new p-n structure ultraviolet photodetector with p(-)-GaN active region
Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition
Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to gr
结构参数对GaN肖特基紫外探测器性能的影响及器件设计
283nm背照射p-i-n型AlGaN日盲紫外探测器
246nm p-i-n型背照AlGaN太阳盲紫外探测器的研制
p-GaN/p-AlxGa1-xN异质结界面处二维空穴气的性质及其对欧姆接触的影响
以弱p型为有源区的新型p-n结构GaN紫外探测器
穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响
器件参数对GaN基n^+-GaN/i-AlxGa1-xN/n^+-GaN结构紫外和红外双色探测器中紫外响应的影响
高阻氮化镓外延层的异常光吸收
p-GaN层厚度对GaN基p-i-n结构紫外探测器性能的影响
Time delay in InGaN multiple quantum well laser diodes at room temperature
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapordeposition
Microstructure and strain films using in-plane grazing analysis of GaN epitaxial incidence x-ray diffraction
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
Thermal analysis of GaN laser diodes in a package structure
期刊信息
《中国物理快报:英文版》
中国科技核心期刊
主管单位:中国科学院
主办单位:中国科学院物理研究所、中国物理学会
主编:
地址:北京中关村中国科学院物理研究所内(北京603信箱《中国物理快报》编辑部)
邮编:100080
邮箱:cpl@aphy.iphy.ac.cn
电话:010-82649490 82649024
国际标准刊号:ISSN:0256-307X
国内统一刊号:ISSN:11-1959/O4
邮发代号:
获奖情况:
中国期刊方阵“双高”期刊
国内外数据库收录:
美国化学文摘(网络版),美国数学评论(网络版),荷兰文摘与引文数据库,美国剑桥科学文摘,美国科学引文索引(扩展库),英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,英国英国皇家化学学会文摘
被引量:190